Yazar "Yıldız, Dilber Esra" için listeleme
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The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
Koçyiğit, Adem; Yıldız, Dilber Esra; Sarılmaz, Adem; Özel, Feyyaz; Yıldırım, Murat (Springer, 2020)CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the ... -
Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
Yıldız, Dilber Esra; Altındal, Şemsettin (National Institute of Optoelectronics, 2010)Dielectric properties and electrical conductivity of the Al/SiO2/p-Si (MIS) structures have been investigated in the temperature and frequency range of 80-400 K and 1 kHz-100 kHz, respectively. Experimental results show ... -
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
Yıldız, Dilber Esra; Karabulut, Abdülkerim; Orak, Iman; Türüt, Abdulmecit (Springer, 2021)The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ... -
Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode
Yıldız, Dilber Esra; Apaydın, Doğukan Hazar; Toppare, Levent Kamil; Çırpan, Ali (John Wiley and Sons Inc., 2017)In this study, thickness-dependent current density–voltage (J–V) characteristics obtained for poly{(9,9-dioctylfluorene)?2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based ... -
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
Karaduman, Irmak; Barin, Özlem; Yıldız, Dilber Esra; Acar, Selim (American Institute of Physics Inc., 2015)In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ... -
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ... -
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
Turut, Abdülmecit; Yıldız, Dilber Esra; Karabulut, Abdülkerim; Orak, İkram (Springer, 2020)Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ... -
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (Springer, 2020)The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ... -
Electrical characterization of CdZnTe/Si diode structure
Doğru Balbaşı, Ciğdem; Terlemezoğlu, Makbule; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Parlak, Mehmet (Springer Heidelberg, 2020)Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ... -
Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
Yıldız, Dilber Esra; Kanbur Çavuş, Hatice (World Scientific Publishing Co. Pte Ltd, 2017)Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ⟨111⟩ and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I−V) characteristics ... -
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Koçyiğit, Adem; Yıldırım, Murat (Elsevier Ltd, 2020)In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in ... -
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
Yıldız, Dilber Esra (Springer New York LLC, 2018)The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ... -
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
Yıldız, Dilber Esra; Dökme, İlbilge (2011)The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ... -
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
Erbilen Tanrıkulu, Esra; Yıldız, Dilber Esra; Günen, Ali; Altındal, Şemsettin (Institute of Physics Publishing, 2015)The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ... -
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Gazi Univ, 2019)The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ... -
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Sürücü, Özge; Parlak, Mehmet (Springer, 2020)This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ... -
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2019)In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ... -
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ... -
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes
Yiğiterol, Fatih; Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Indian Academy of Sciences, 2018)In this study, the effect of Si3N4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current–voltage ( I−V ), capacitance–voltage ( C−V ) and conductance–voltage ( G/w−V ) ... -
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Yıldız, Dilber Esra; Parlak, Mehmet (Canadian Science Publishing, 2018)In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ...