Yazar "Altındal, Şemsettin" için listeleme
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Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
Alialy, Sahar; Altındal, Şemsettin; Erbilen Tanrıkulu, Esra; Yıldız, Dilber Esra (American Institute of Physics Inc., 2014)In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ... -
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ... -
Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
Yıldız, Dilber Esra; Altındal, Şemsettin (National Institute of Optoelectronics, 2010)Dielectric properties and electrical conductivity of the Al/SiO2/p-Si (MIS) structures have been investigated in the temperature and frequency range of 80-400 K and 1 kHz-100 kHz, respectively. Experimental results show ... -
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ... -
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
Erbilen Tanrıkulu, Esra; Yıldız, Dilber Esra; Günen, Ali; Altındal, Şemsettin (Institute of Physics Publishing, 2015)The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ... -
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ... -
The main electrical and interfacial properties of benzotriazole and fluorene based organic devices
Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and ... -
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
Çetinkaya, Hayriye Gökçen; Yıldız, Dilber Esra; Altındal, Şemsettin (World Scientific Publishing Co. Pte Ltd, 2015)In order to see the effect of interfacial layer on electrical characteristics both Au/n-4H- SiC (MS) and Au/TiO<inf>2</inf>/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical ... -
Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure
Alialy, Sahar; Yıldız, Dilber Esra; Altındal, Şemsettin (American Scientific Publishers, 2016)In this paper we examine the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. The current-voltage-temperature (IR-V-T) plots have been investigated in the temperature range of 200-380 K. Experimental ...
