Yazar "Yıldız, Dilber Esra" için listeleme
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Al/Al2o3/P-Si yapısının Co gaz algılama özellikleri
Karaduman, Irmak; Demirel, Nevin; Yıldız, Dilber Esra; Acar, Selim (Gazi Üniversitesi, 2015)Bu çalışmada Al/Al2O3/p-Si yapısının gaz algılama özellikleri incelenmiştir. Al2O3 metal oksit yapısı atomik tabaka biriktirme (ALD) metoduyla üretilmiştir. Üretilen yapının farklı sıcaklıklar (300-450K) ve farklı CO gaz ... -
ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
Aydın, Sefa B.K.; Yıldız, Dilber Esra; Kanbur Çavuş, Hatice; Şahingöz, Recep (Indian Academy of Sciences, 2014)Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using ... -
Analysis of current conduction mechanism in CZTSSe/n-Si structure
Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Çolakoǧlu, Tahir; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2018)In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ... -
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
Güllü, Hasan Hüseyin; Şeme Şirin, Dilara; Yıldız, Dilber Esra (Springer, 2021)A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ... -
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Springer, 2019)The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ... -
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Gazi Univ, 2018)SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ... -
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
Alialy, Sahar; Altındal, Şemsettin; Erbilen Tanrıkulu, Esra; Yıldız, Dilber Esra (American Institute of Physics Inc., 2014)In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ... -
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
Yıldız, Dilber Esra; Güllü, Hasan Hüseyin; Toppare, Levent; Çırpan, Ali (Springer, 2020)The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ... -
Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi
Karaduman, Irmak; Barin, Özlem; Yıldız, Dilber Esra; Acar, Selim (Gazi Univ, 2016)Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO 2 environment clean and reliable use of the H-2 gas as the energy source of the future are expanded in various fields. In this ... -
Au/Si3N4/4H n-SiC (MYY) yapıların akım iletim mekanizması ve elektriksel özelliklerinin sıcaklığa bağlı incelenmesi
Yiğiterol, Fatih (Hitit Üniversitesi, 2019)Au/Si3N4/4H n-SiC metal-yalıtkan-yarıiletken (MYY) yapıların/Schottky diyotların akım-voltaj (I-V), kapasitans-voltaj (C-V), kondüktans-voltaj (G/w-V) karakteristikleri, 160-400 K sıcaklık aralığında ölçüldü. Termoiyonik ... -
Benzodithiophene and benzotriazole bearing conjugated polymers for electrochromic and organic solar cell applications
Akbaşoğlu Ünlü, Naime; Hacıoğlu, Şerife O.; Hizalan, Gönül; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (Electrochemical Society Inc., 2017)Herein, alternating donor-acceptor type benzodithiophene and benzotriazole bearing copolymers were synthesized and thieno[3,2-b]thiophene and furan units were incorporated as ?-bridges. The application of these polymers ... -
Benzotriazole and benzodithiophene containing medium band gap polymer for bulk heterojunction polymer solar cell applications
Ünay, Hande; Akbaşoğlu Ünlü, Naime; Hizalan, Gönül; Özdemir Hacıoğlu, Şerife; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (John Wiley and Sons Inc., 2014)An alternating donor‐acceptor copolymer based on a benzotriazole and benzodithiophene was synthesized and selenophene was incorporated as π‐bridge. The photovoltaic and optical properties of polymer were studied. The ... -
Benzotriazole and benzothiadiazole containing conjugated copolymers for organic solar cell applications
Karakuş, Melike; Apaydın, Doğukan Hazar; Yıldız, Dilber Esra; Toppare, Levent Kamil; Çırpan, Ali (Elsevier Ltd, 2012)2-Dodecyl benzotriazole (BTz) and benzothiadiazole (BTd) containing copolymers poly(4-(2-dodecyl-2H-benzo[d][1,2,3]triazol-4-yl)benzo[c][1,2,5] thiadiazole (P1), poly(4-(5-(2-dodecyl-7-(thiophen-2yl)-2H-benzo[d][1,2,3] ... -
Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Springer, 2021)In this study, electrical properties of the Al/TiO2/p-Si diode structure with an atomic layer deposited TiO2 interface layer are investigated by current-voltage (I-V), capacitance-voltage (C - V), and conductance-voltage ... -
CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation
Karaduman, Irmak; Demir, Mehmet; Yıldız, Dilber Esra; Acar, Selim (Institute of Physics Publishing, 2015)Al/TiO2/p-Si and Al/TIO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two ... -
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ... -
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
Yıldız, Dilber Esra; Güllü, Hasan Hüseyin; Sarılmaz, Adem; Özel, Faruk; Koçyiğit, Adem; Yıldırım, Murat (Springer, 2020)Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ... -
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
Bayraklı Sürücü, Özge; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Yıldız, Dilber Esra; Parlak, Mehmet (Elsevier, 2019)In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ... -
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ... -
Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
Yıldız, Dilber Esra; Koçyiğit, Adem; Erdal, Mehmet Okan; Yıldırım, Murat (Indian Acad Sciences, 2021)The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the ...
