ORCID "Gasanly, Nizami / 0000-0002-3199-6686" için listeleme
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Material and device properties of Si-based Cu0.5Ag0.5InSe2 thin-film heterojunction diode
Gullu, H. H.; Isik, M.; Delice, S.; Parlak, M.; Gasanly, N. M. (Springer, 2020)Cu0.5Ag0.5InSe2 (CAIS) thin films were deposited on a glass substrate by sequential sputtering of Cu, Ag, and In2Se3-stacked film layers. Structural characterization showed that the deposited CAIS film satisfies nearly the ... -
Structural and temperature-tuned optical characteristics of Bi12GeO20 sillenite crystals
Delice, S.; Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E. (Elsevier, 2020)Sillenite compounds exhibit unique photorefractive and electro-optic characteristics providing attractiveness to these materials in various optoelectronic applications. The present paper aims at investigating one of the ... -
Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films
Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Gasanly, N. M.; Parlak, M. (Elsevier Sci Ltd, 2020)Structural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray ...