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Toplam kayıt 9, listelenen: 1-9
Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure
(American Scientific Publishers, 2016)
In this paper we examine the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. The current-voltage-temperature (IR-V-T) plots have been investigated in the temperature range of 200-380 K. Experimental ...
Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
(National Institute of Optoelectronics, 2010)
Dielectric properties and electrical conductivity of the Al/SiO2/p-Si (MIS) structures have been investigated in the temperature and frequency range of 80-400 K and 1 kHz-100 kHz, respectively. Experimental results show ...
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
(2012)
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ...
The main electrical and interfacial properties of benzotriazole and fluorene based organic devices
(2013)
Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and ...
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
(2010)
We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
(World Scientific Publishing Co. Pte Ltd, 2015)
In order to see the effect of interfacial layer on electrical characteristics both Au/n-4H- SiC (MS) and Au/TiO<inf>2</inf>/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical ...
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)
The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ...
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ...