Ara
Toplam kayıt 6, listelenen: 1-6
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
(Canadian Science Publishing, 2018)
In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred ...
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes
(Indian Academy of Sciences, 2018)
In this study, the effect of Si3N4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current–voltage ( I−V ), capacitance–voltage ( C−V ) and conductance–voltage ( G/w−V ) ...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
(Springer New York LLC, 2018)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C- V) and ...
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ...
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)
The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...