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Toplam kayıt 2, listelenen: 1-2
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
(World Scientific Publishing Co. Pte Ltd, 2015)
In order to see the effect of interfacial layer on electrical characteristics both Au/n-4H- SiC (MS) and Au/TiO<inf>2</inf>/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical ...
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)
The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ...