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Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...