Cu-Al-Mn shape memory alloy based Schottky diode formed on Si

Abstract

In this work, martensite was made over the wide temperature ranges and the two forms of martensite mor-phology in Cu85.41Al9.97Mn4.62shape memory alloy (SMA) were β′and γ′martensite phases. The SMA wascharacterized by the use of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. In order tofabricate the Schottky diode, Cu-Al-Mn alloy was used as a Schottky contact onp-type Si semiconductor sub-strate. Some of the crucial parameters for diodes such as ideality factor and barrier height values were obtainedfrom electrical measurements. Illumination-dependent measurements showed that the fabricated device presentsthe behaviors of photodiode and photoconducting. Besides, it is found that the fabricated diode's structure issensitive to illumination. Frequency-dependent measurements also indicated that the series resistance and in-terface state parameters are crucial to affect electrical characteristics of the fabricated diode. The experimentalresults showed that the fabricated Schottky device could be used in variety of optoelectronic applications.