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dc.contributor.authorDelice, Serdar
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2019-05-13T09:03:43Z
dc.date.available2019-05-13T09:03:43Z
dc.date.issued2018
dc.identifier.citationDelice, S., Isik, M., & Gasanly, N. M. (2018). Study on thermoluminescence of TlInS2 layered crystals doped with Pr. Materials Science in Semiconductor Processing, 80, 99-103.en_US
dc.identifier.issn1369-8001
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2018.02.027
dc.identifier.urihttps://hdl.handle.net/11491/1521
dc.description.abstractPraseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in overlapping two TL peaks at temperatures of 35 K (peak A) and 48 K (peak B) for 0.6 K/s heating rate. TL curve was analyzed with curve fitting and initial rise methods. Both of the applied methods resulted in consistent activation energies of 19 and 45 meV. The revealed trap levels were found to be dominated by mixed order of kinetics. Various heating rate dependencies of TL glow curves were also investigated and it was found that while peak A shows usual behavior, peak B exhibits anomalous heating rate behavior. Distribution of trap levels was explored using an experimental method called as Tmax?Tstop method. Quasi-continuous distributions with increasing activation energies from 19 to 29 meV (peak A) and from 45 to 53 meV (peak B) were ascribed to trap levels. Effect of Pr doping on the TL response of undoped TlInS2 crystals was discussed in the paper. © 2018 Elsevier Ltden_US
dc.language.isoeng
dc.publisherElsevier Ltden_US
dc.relation.isversionof10.1016/j.mssp.2018.02.027en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChalcogenidesen_US
dc.subjectDefectsen_US
dc.subjectDopingen_US
dc.subjectThermoluminescenceen_US
dc.titleStudy on thermoluminescence of TlInS2 layered crystals doped with Pren_US
dc.typearticleen_US
dc.relation.journalMaterials Science in Semiconductor Processingen_US
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.authorid0000-0001-5409-6528en_US
dc.identifier.volume80en_US
dc.identifier.startpage99en_US
dc.identifier.endpage103en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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