Konu "Interface State Density" için Fizik Bölümü listeleme
Toplam kayıt 2, listelenen: 1-2
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ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
(Indian Academy of Sciences, 2014)Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using ... -
Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
(World Scientific Publishing Co. Pte Ltd, 2017)Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ⟨111⟩ and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I−V) characteristics ...