Ara
Toplam kayıt 180, listelenen: 151-160
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
(Springer, 2021)
The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
(Springer, 2021)
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ...
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ...
Electrical characterization of CdZnTe/Si diode structure
(Springer Heidelberg, 2020)
Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
(Springer, 2020)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ...
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
(Springer, 2020)
The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ...
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
(Springer, 2020)
Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer, 2019)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ...