Ara
Toplam kayıt 180, listelenen: 161-170
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
(Springer, 2020)
Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ...
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
(Springer, 2021)
Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...
Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
(Indian Acad Sciences, 2021)
The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the ...
Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi
(Gazi Univ, 2016)
Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO 2 environment clean and reliable use of the H-2 gas as the energy source of the future are expanded in various fields. In this ...
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
(Gazi Univ, 2019)
The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ...
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
(Springer, 2020)
CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the ...
Impact of La3+ and Y3+ ion substitutions on structural, magnetic and microwave properties of Ni0.3Cu0.3Zn0.4Fe2O4 nanospinel ferrites synthesized via sonochemical route
(Royal Soc Chemistry, 2019)
In the current study, Ni0.4Cu0.2Zn0.4LaxYxFe2-xO4 (x = 0.00 - 0.10) nanospinel ferrites (NSFs) were fabricated via an ultrasonic irradiation route. The creation of single phase of spinel nanoferrites (NSFs) was investigated ...
Ni0.4Cu0.2Zn0.4TbxFe2-xO4 nanospinel ferrites: Ultrasonic synthesis and physical properties
(Elsevier, 2019)
The Fe3+ ions were replace with Tb3+ ions as highly paramagnetic rare earth element within the structure of Ni0.4Cu0.2Zn0.4Fe2O4 nano-spinel ferrites (NSFs). The structural, magnetic, spectroscopic and optic properties ...
Physical properties of heteroatom doped graphene monolayers in relation to supercapacitive performance
(Natl Inst Science Communication-Niscair, 2020)
Electrodes fabricated using graphene are quite promising for electric double layer capacitors. However graphene has the limitations of low 'Quantum Capacitance (QC)' near fermi level due to the presence of Dirac point that ...