Ara
Toplam kayıt 180, listelenen: 31-40
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
(2012)
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ...
Synthesis and characterization of oleylamine capped MnxFe1-xFe2O4nanocomposite: Magneto-optical properties, cation distribution and hyperfine interactions
(Elsevier Ltd, 2016)
Pure Fe3O4 NPs and Oleylamin (OAm) capped MnxFe1-xFe2O4 (MnxFe1-xFe2O4@OAm) (0.2 ≤ x ≤ 1.0) nanocomposites (NCs) were synthesized by the polyol route. Lattice parameter increases with increasing Mn2+ concentration, due to ...
A shape memory alloy based on photodiode for optoelectronic applications
(Elsevier Ltd, 2018)
A photodiode was fabricated as a Schottky contact using Cu-Al-Mn shape memory alloy and p-Si substrate. The alloy was characterized by some characterization techniques such as (SEM), XRD and DSC. The electrical and ...
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films
(Springer New York LLC, 2019)
Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550–950 nm and in temperature range of 10–300 K. Transmission spectra ...
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
(Indian Academy of Sciences, 2019)
Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The ...
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes
(Indian Academy of Sciences, 2018)
In this study, the effect of Si3N4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current–voltage ( I−V ), capacitance–voltage ( C−V ) and conductance–voltage ( G/w−V ) ...
ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
(Indian Academy of Sciences, 2014)
Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using ...
Design, synthesis and docking studies of benzimidazole derivatives as potential EGFR inhibitors
(Elsevier Masson SAS, 2019)
In this study, a series of benzimidazoles bearing thiosemicarbazide chain or triazole and thiadiazole rings were designed and synthesized. Crystal and molecular structure of the compound 5c has been characterized by single ...
Sr1-xLaxFe12O19 (0.0≤x≤0.5) hexaferrites: Synthesis, characterizations, hyperfine interactions and magneto-optical properties
(Elsevier Ltd, 2016)
A simple sol-gel auto combustion process was used to synthesize La3+ substituted M-type strontium hexaferrite, Sr1-xLaxFe12-xO19 (0.0≤x≤ 0.5). Structural, magnetic, and optical behavior as a function of La3+ substitutions ...