Ara
Toplam kayıt 195, listelenen: 111-120
Some aspects of thermally induced martensite in Fe-30% Ni-5% Cu alloy
(2007)
Kinetical, morphological, crystallographical and several thermal properties of thermally induced martensite in the austenite phase ofFe–30% Ni–5% Cu alloy were investigated. Scanning electron microscope (SEM), transmission ...
Aspects of thermal martensite in a FeNiMnCo alloy
(2010)
Thermal martensite characteristics in Fe-29%Ni-2%Mn-2%Co alloy were investigated with scanning electron microscopy (SEM) and Mössbauer spectroscopy characterization techniques. SEM observations obviously revealed the lath ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...
Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode
(John Wiley and Sons Inc., 2017)
In this study, thickness-dependent current density–voltage (J–V) characteristics obtained for poly{(9,9-dioctylfluorene)?2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based ...
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
(2013)
Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ...
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)
The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ...
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
(American Institute of Physics Inc., 2015)
In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ...
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity
(World Scientific Publishing Co. Pte Ltd, 2015)
In order to see the effect of interfacial layer on electrical characteristics both Au/n-4H- SiC (MS) and Au/TiO<inf>2</inf>/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) were fabricated and their main electrical ...
Theoretical prediction of the structural, elastic, mechanical and phonon properties of bismuth telluride under pressure
(World Scientific Publishing Co. Pte Ltd, 2015)
Bismuth telluride (Bi2Te3) is one of the most intricate materials with its semiconducting, insulating and pressure-induced superconducting properties. Although different theoretical works have been carried out to understand ...
Magneto-optical investigation and hyperfine interactions of copper substituted Fe3O4 nanoparticles
(Elsevier Ltd, 2016)
CCopper substituted Fe3O4 nanoparticles (NPs) (CuxFe1−xFe2O4 (0.0≤x≤1.0)) were synthesized by polyol method and the effect of Cu2+ substitution on structural, magnetic and optical properties of Fe3O4 was investigated. X-ray ...