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Toplam kayıt 2, listelenen: 1-2
Effect of N doping on TL2GA2S3SE single crystals: thermoluminescence characterization of defect centers
(Eskişehir Teknik Üniversitesi, 2018)
Thermoluminescence study on nitrogen doped Tl2Ga2S3Se single crystals was achieved by performing the experiments with different stopping temperatures of 10−24 K and various heating rates between 0.4 and 1.2 K/s below room ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...