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Toplam kayıt 8, listelenen: 1-8
Dielectric properties and ac electrical conductivity of MIS structures in the wide frequency and temperature range
(National Institute of Optoelectronics, 2010)
Dielectric properties and electrical conductivity of the Al/SiO2/p-Si (MIS) structures have been investigated in the temperature and frequency range of 80-400 K and 1 kHz-100 kHz, respectively. Experimental results show ...
Magnetic and dielectric properties of Bi3+ substituted SrFe12O19 hexaferrite
(Elsevier B.V., 2016)
In the present study, SrBixFe12−xO19 (0.0≤x≤1.0) nanomaterials were successfully synthesized by using chemical co-precipitation method. Products were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy ...
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer
(2012)
ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-SiSchottky devices (SDs) were fabricated usingn-type single crystal silicon(phosphor-doped). The ohmic and rectifier contacts were thermally formed ...
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
(2013)
Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ...
Dielectric properties, cationic distribution calculation and hyperfine interactions of La3+ and Bi3+ doped strontium hexaferrites
(Elsevier Ltd, 2016)
La3+ and Bi3+ doped M-type strontium hexaferrites (SrM) were prepared by sol–gel-auto combustion. X-ray powder diffraction (XRD), Scanning Electron Microscopy (SEM), Vibrating Simple Magnetometer (VSM), Mössbauer Spectroscopy ...
Electrical properties and hyperfine interactions of boron doped Fe3O4 nanoparticles
(Academic Press, 2015)
The single spinel phase nano-structured particles of FeBxFe2-xO4 (x = 0.1, 0.2, 0.3, 0.4 and 0.5) were synthesized by the glycothermal method and the effect of B3+ substitution on structural and dielectric properties of ...
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)
The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ...
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ...