Başlık için Makale Koleksiyonu listeleme
Toplam kayıt 186, listelenen: 51-70
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Effect of Si on austenite stabilization, martensite morphology, and magnetic properties in Fe-26%Ni-x%Si alloys
(2011)The effect of Si on the austenite stabilization, martensite morphology, and magnetic properties in Fe-26%Ni-x%Si (x=3.5, 5, and 6) alloys have been studied by means of transmission electron microscopy (TEM) and Mössbauer ... -
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
(American Institute of Physics Inc., 2015)In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ... -
Effects of Ce-Dy rare earths co-doping on various features of Ni-Co spinel ferrite microspheres prepared via hydrothermal approach
(Elsevier, 2021)The effects of Ce-Dy co-doping on the crystal structure, optical, dielectric, magnetic properties, and hyperfine interactions of Ni-Co spinel ferrite microspheres synthesized hydrothermally have been studied. A series of ... -
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
(2010)We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ... -
Elastic and mechanical properties of cubic diamond under pressure
(Physical Society of the Republic of China, 2015)We report on some structural, elastic, and mechanical properties of cubic diamond under pressures up to 500 GPa. Unlike existing theoretical works, the second-generation reactive bond order (REBO) potential was used for ... -
Elastic and mechanical properties of hexagonal diamond under pressure
(Springer Verlag, 2015)Hexagonal diamond is the harder and stiffer alternative of traditional cubic diamond for today’s technology. Although several theoretical attempts have been performed to understand the ground-state elastic properties of ... -
Elastic and related properties of Si under hydrostatic pressure calculated using modified embedded atom method
(Institute of Physics Publishing, 2016)Although several theoretical works were performed to describe the high pressure behavior of typical cubic elastic constants of cubic diamond silicon (dc-Si), some of the obtained results of these studies still remain ... -
Elastic, mechanical and phonon behavior of wurtzite cadmium sulfide under pressure
(MDPI AG, 2017)Cadmium sulfide is one of the cutting-edge materials of current optoelectronic technology. Although many theoretical works are presented the for pressure-dependent elastic and related properties of the zinc blende crystal ... -
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
(Springer, 2020)Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ... -
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
(Springer, 2020)The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ... -
Electrical characterization of CdZnTe/Si diode structure
(Springer Heidelberg, 2020)Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ... -
Electrical properties and hyperfine interactions of boron doped Fe3O4 nanoparticles
(Academic Press, 2015)The single spinel phase nano-structured particles of FeBxFe2-xO4 (x = 0.1, 0.2, 0.3, 0.4 and 0.5) were synthesized by the glycothermal method and the effect of B3+ substitution on structural and dielectric properties of ... -
Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system
(World Scientific Publishing Co. Pte Ltd, 2017)Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si ⟨111⟩ and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage (I−V) characteristics ... -
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
(Elsevier Ltd, 2020)In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in ... -
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ... -
Embedded atom method-based geometry optimization aspects of body-centered cubic metals
(2013)We present embedded atom method-based geometry optimization calculations for Fe, Cr, Mo, Nb, Ta, V and W body-centered cubic metals with Finnis - Sinclair potentials. After the optimization, we determine their typical ... -
Evaluation of Zerumbone as an EGFR Tyrosine Kinase Inhibitor by Molecular Docking Method
(University of Ankara, 2023)Objective: EGFR-TK domain is of great importance in the initiation and progression of various cancer types, especially lung cancer. The existing EGFR-TK inhibitors have numerous side effects, which make them improper to ... -
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ... -
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ... -
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
(Gazi Univ, 2019)The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ...