Ara
Toplam kayıt 122, listelenen: 81-90
Investigation of the time evolutions of some log-periodic oscillators
(2010)
We consider the time evolution of the one dimensional classical and quantum oscillator systems according to its mass and spring constant with fluctuating time. By using the SU(1,1) coherent states, the classical equations ...
Temperature dependence of band gaps in sputtered SnSe thin films
(Elsevier Ltd, 2019)
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ...
Trap distribution in AgIn5S8 single crystals: Thermoluminescence study
(Elsevier Ltd, 2018)
Distribution of shallow trap levels in AgIn5S8 crystals has been investigated by thermoluminescence (TL) measurements performed below room temperature (10–300 K). One broad TL peak centered at 33 K was observed as constant ...
Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
(Elsevier B.V., 2019)
In this work, martensite was made over the wide temperature ranges and the two forms of martensite mor-phology in Cu85.41Al9.97Mn4.62shape memory alloy (SMA) were β′and γ′martensite phases. The SMA wascharacterized by the ...
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
(Elsevier B.V., 2016)
Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10–300 K) with various heating rates between ...
Aspects of thermal martensite in a FeNiMnCo alloy
(2010)
Thermal martensite characteristics in Fe-29%Ni-2%Mn-2%Co alloy were investigated with scanning electron microscopy (SEM) and Mössbauer spectroscopy characterization techniques. SEM observations obviously revealed the lath ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...
Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode
(John Wiley and Sons Inc., 2017)
In this study, thickness-dependent current density–voltage (J–V) characteristics obtained for poly{(9,9-dioctylfluorene)?2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based ...
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
(2013)
Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ...
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)
The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ...