Ara
Toplam kayıt 157, listelenen: 91-100
Characterization of martensite in Fe-25%Ni-15%Co-5%Mo alloy
(2009)
Kinetic, morphological, crystallographical, magnetic and thermal characteristics of thermally induced martensite in Fe-25%Ni-15%Co-5%Mo alloy have been investigated by scanning electron microscope (SEM), transmission ...
Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
(Elsevier B.V., 2019)
In this work, martensite was made over the wide temperature ranges and the two forms of martensite mor-phology in Cu85.41Al9.97Mn4.62shape memory alloy (SMA) were β′and γ′martensite phases. The SMA wascharacterized by the ...
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements
(Elsevier B.V., 2016)
Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10–300 K) with various heating rates between ...
Some aspects of thermally induced martensite in Fe-30% Ni-5% Cu alloy
(2007)
Kinetical, morphological, crystallographical and several thermal properties of thermally induced martensite in the austenite phase ofFe–30% Ni–5% Cu alloy were investigated. Scanning electron microscope (SEM), transmission ...
Aspects of thermal martensite in a FeNiMnCo alloy
(2010)
Thermal martensite characteristics in Fe-29%Ni-2%Mn-2%Co alloy were investigated with scanning electron microscopy (SEM) and Mössbauer spectroscopy characterization techniques. SEM observations obviously revealed the lath ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...
Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode
(John Wiley and Sons Inc., 2017)
In this study, thickness-dependent current density–voltage (J–V) characteristics obtained for poly{(9,9-dioctylfluorene)?2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3] triazole)} (PFTBT) conjugated copolymer based ...
Dielectric and electrical properties of an organic device containing benzotriazole and fluorene bearing copolymer
(2013)
Dielectric and electrical properties of a benzotriazole and fluorene copolymer were investigated using current-voltage (I-V), capacitance-voltage (C-V), and conductance-voltage (G/w-V) measurements at room temperature. The ...
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)
The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ...
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
(American Institute of Physics Inc., 2015)
In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ...