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Toplam kayıt 2, listelenen: 1-2
Study on the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure
(American Scientific Publishers, 2016)
In this paper we examine the reverse bias carrier transport mechanism in Au/TiO2/n-4H-SiC structure. The current-voltage-temperature (IR-V-T) plots have been investigated in the temperature range of 200-380 K. Experimental ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...