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Toplam kayıt 2, listelenen: 1-2
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
(Springer, 2021)
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ...
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
(Springer, 2021)
Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform ...