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Toplam kayıt 2, listelenen: 1-2
Electrical characterization of CdZnTe/Si diode structure
(Springer Heidelberg, 2020)
Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...