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Toplam kayıt 9, listelenen: 1-9
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
(Elsevier Ltd, 2020)
In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in ...
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
(Springer, 2020)
Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ...
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
(Springer, 2020)
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ...
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
(Springer, 2021)
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ...
Electrical characterization of CdZnTe/Si diode structure
(Springer Heidelberg, 2020)
Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
(Springer, 2020)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ...
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
(Springer, 2020)
The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ...
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
(Springer, 2020)
Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ...
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
(Springer, 2021)
Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform ...