Ara
Toplam kayıt 4, listelenen: 1-4
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films
(Springer New York LLC, 2019)
Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550–950 nm and in temperature range of 10–300 K. Transmission spectra ...
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ...
Study on the electrical properties of ZnSe/Si heterojunction diode
(Springer New York LLC, 2017)
ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ...