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Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ...