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Toplam kayıt 51, listelenen: 31-40
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)
The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ...
Benzodithiophene and benzotriazole bearing conjugated polymers for electrochromic and organic solar cell applications
(Electrochemical Society Inc., 2017)
Herein, alternating donor-acceptor type benzodithiophene and benzotriazole bearing copolymers were synthesized and thieno[3,2-b]thiophene and furan units were incorporated as ?-bridges. The application of these polymers ...
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)
The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ...
Benzotriazole and benzothiadiazole containing conjugated copolymers for organic solar cell applications
(Elsevier Ltd, 2012)
2-Dodecyl benzotriazole (BTz) and benzothiadiazole (BTd) containing copolymers poly(4-(2-dodecyl-2H-benzo[d][1,2,3]triazol-4-yl)benzo[c][1,2,5] thiadiazole (P1), poly(4-(5-(2-dodecyl-7-(thiophen-2yl)-2H-benzo[d][1,2,3] ...
CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation
(Institute of Physics Publishing, 2015)
Al/TiO2/p-Si and Al/TIO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two ...
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
(Springer, 2020)
Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ...
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
(Springer, 2020)
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ...
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
(Springer, 2021)
The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...