Ara
Toplam kayıt 3288, listelenen: 2911-2920
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
(Springer, 2020)
Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ...
Self-Handicapping and Self-esteem Levels of Turkish Category I Wrestling Referees
(2020)
Objective: Self-esteem and self-handicapping were considered as some of the components that affect success. This paper aimed to investigate self-esteem and self-handicapping levels of active Category I (top-level) wrestling ...
The Prevalence of Overweight and Obesity among Students between the Ages of 6 and 15 years in Konya
(2020)
BACKGROUND/AIMS This study was conducted to determine the prevalence of overweight and obesity among primary school students. MATERIAL and METHODS A total of 10781 students (5622 boys, 5159 girls) aged 6–15 years participated ...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer, 2019)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ...
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
(Springer, 2020)
Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ...
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
(Springer, 2021)
Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...
Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
(Indian Acad Sciences, 2021)
The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the ...
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
(Gazi Univ, 2019)
The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ...
Nexus between disaggregated electricity consumption and CO2 emissions in Turkey: new evidence from quantile-on-quantile approach
(Springer, 2021)
Carbon emission is still one of the most hazardous environmental problem across the world. International authorities as well as local governments are projecting strategies to deal with this issue. To this end, our study ...