Yazar "Güllü, Hasan Hüseyin" için WoS İndeksli Yayınlar Koleksiyonu listeleme
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Study on the electrical properties of ZnSe/Si heterojunction diode
Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Yıldız, Dilber Esra; Parlak, Mehmet (Springer New York LLC, 2017)ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ... -
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra (Springer, 2020)Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ... -
Temperature dependence of band gaps in sputtered SnSe thin films
Delice, Serdar; Işık, Mehmet; Güllü, Hasan Hüseyin; Terlemezoğlu, Makbule; Bayraklı Sürücü, Özge; Parlak, Mehmet; Gasanly, Nizami Mamed (Elsevier Ltd, 2019)Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ... -
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
Güllü, Hasan Hüseyin; Yıldız, Dilber Esra; Bayraklı Sürücü, Özge; Terlemezoğlu, Makbule; Parlak, Mehmet (Indian Academy of Sciences, 2019)Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The ... -
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yiğiterol, Fatih; Güllü, Hasan Hüseyin; Bayraklı Sürücü, Özge; Yıldız, Dilber Esra (Springer New York LLC, 2018)Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C- V) and ...