Ara
Toplam kayıt 41, listelenen: 11-20
ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode
(Indian Academy of Sciences, 2014)
Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO2) thin film was performed at room temperature. The forward and reverse bias current-voltage (I-V) characteristics of diode were studied. Using ...
Solution processable benzotriazole and fluorene containing copolymers for photovoltaic applications
(2012)
2-Dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating copolymers poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) (P1), poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) ...
Optimizing the organic solar cell efficiency: Role of the active layer thickness
(2013)
A 2-dodecyl benzotriazole and 9,9-dioctylfluorene containing alternating conjugated polymer, poly((9,9-dioctylfluorene)-2,7-diyl-(4,7-bis(thien-2-yl) 2-dodecyl-benzo[1,2,3]triazole)) (PFTBT), was blended with PCBM (1:1, ...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
(Springer New York LLC, 2018)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C- V) and ...
The main electrical and interfacial properties of benzotriazole and fluorene based organic devices
(2013)
Electrical and interfacial properties of ITO/PEDOT:PSS/poly((9,9-dioctylfluorene)-2,7-diyl(2-dodecyl-benzo[1,2,3]triazole)) (PFTBT)/Au devices were investigated using current-voltage (I-V), capacitance-voltage (C-V) and ...
Synthesis of a benzotriazole bearing alternating copolymer for organic photovoltaic applications
(Royal Society of Chemistry, 2015)
A low band gap donor–acceptor (D–A) copolymer PTBTBDT, namely, poly(2-dodecyl-4,7-di(thiophen-2-yl)-2H-benzo[d][1,2,3]triazole-alt-4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b′]dithiophene), was designed and synthesized via ...
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
(2010)
We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier ...
UV light activated gas sensor for NO2 detection
(Elsevier Ltd, 2014)
In the present study, UV light activated gas sensor was investigated for Al/Al2O3/p-Si and Al/TiO2/Al2O3/p-Si samplesby atomic layer deposition method (ALD). Generally, in order to obtain the sensing performance, traditional ...
Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices
(Elsevier Ltd, 2014)
In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...