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Temperature-dependent band gap characteristics of Bi12SiO20 single crystals

dc.contributor.authorIsik, M.
dc.contributor.authorDelice, S.
dc.contributor.authorGasanly, N.M.
dc.contributor.authorDarvishov, N.H.
dc.contributor.authorBagiev, V.E.
dc.date.accessioned2021-11-01T14:51:42Z
dc.date.available2021-11-01T14:51:42Z
dc.date.issued2019
dc.identifier.issn0021-8979
dc.identifier.urihttps://doi.org/10.1063/1.5129019
dc.identifier.urihttps://hdl.handle.net/11491/6278
dc.description.abstractBi12SiO20 single crystals have attracted interest due to their remarkable photorefractive characteristics. Since bandgap and refractive index are related theoretically to each other, it takes much attention to investigate temperature dependency of bandgap energy to understand the behavior of photorefractive crystals. The present study aims at investigating structural and optical characteristics of photorefractive Bi12SiO20 single crystals grown by the Czochralski method. The structural characterization methods indicated that atomic composition ratios of constituent elements were well-matched with the chemical compound Bi12SiO20, and grown crystals have a cubic crystalline structure. Optical properties of crystals were investigated by room temperature Raman spectroscopy and temperature-dependent transmission measurements between 10 and 300 K. The analyses of transmittance spectra by absorption coefficient and derivative spectrophotometry techniques resulted in energy bandgaps decreasing from 2.61 to 2.48 eV and 2.64 to 2.53 eV as temperature was increased from 10 to 300 K. The Varshni model was applied to analyze temperature-bandgap energy dependency. © 2019 Author(s).en_US
dc.language.isoengen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleTemperature-dependent band gap characteristics of Bi12SiO20 single crystalsen_US
dc.typearticleen_US
dc.department[Belirlenecek]en_US
dc.identifier.volume126en_US
dc.identifier.issue24en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.department-tempIsik, M., Department of Electrical and Electronics Engineering, Atilim University, Ankara, 06836, Turkey; Delice, S., Department of Physics, Hitit University, Corum, 19040, Turkey; Gasanly, N.M., Department of Physics, Middle East Technical University, Ankara, 06800, Turkey, Virtual International Scientific Research Centre, Baku State University, Baku, 1148, Azerbaijan; Darvishov, N.H., Institute of Physical Problems, Baku State University, Baku, 1148, Azerbaijan; Bagiev, V.E., Institute of Physical Problems, Baku State University, Baku, 1148, Azerbaijanen_US
dc.contributor.institutionauthor[Belirlenecek]
dc.identifier.doi10.1063/1.5129019
dc.authorscopusid23766993100
dc.authorscopusid55751932500
dc.authorscopusid35580905900
dc.authorscopusid6508352480
dc.authorscopusid6602255913
dc.description.scopuspublicationid2-s2.0-85077400821en_US


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