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dc.contributor.authorErbilen Tanrıkulu, Esra
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorGünen, Ali
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2019-05-10T09:39:13Z
dc.date.available2019-05-10T09:39:13Z
dc.date.issued2015
dc.identifier.citationTanrıkulu, E. E., Yıldız, D. E., Günen, A., & Altındal, Ş. (2015). Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes. Physica Scripta, 90(9), 095801.en_US
dc.identifier.issn0031-8949
dc.identifier.urihttps://doi.org/10.1088/0031-8949/90/9/095801
dc.identifier.urihttps://hdl.handle.net/11491/636
dc.description.abstractThe main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric interfacial layer between metal and semiconductor can improve the performance of Schottky diodes. From the experimental data, both electrical and dielectric parameters were found as strong function of frequency and applied bias voltage. The Fermi energy level (EF), the concentration of doping donor atoms (P), barrier height (?B) and series resistance (Rs) values were obtained from reverse and forward bias C-V characteristics. The changes in EF and ND with frequency are considerably low. Therefore, their values were taken at about constant. The real and imaginary parts of dielectric constant (??, ??), tangent loss (tan?), ac electrical conductivity (?ac), and real and imaginary parts of electric modulus (M? and M?) values were also obtained from reverse and forward bias C-V and G/?-V characteristics. In addition, the voltage dependent profiles of all these electrical and dielectric parameters were drawn for each frequency. These results confirmed that both electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type SBD are quite sensitive to both the frequency and applied bias voltage due to surface polarization, density distribution of interface traps (Dit), and interfacial layer. © 2015 The Royal Swedish Academy of Sciences.en_US
dc.language.isoeng
dc.publisherInstitute of Physics Publishingen_US
dc.relation.isversionof10.1088/0031-8949/90/9/095801en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAc Electrical Conductivityen_US
dc.subjectAu/TiO2/n-4H-SiCen_US
dc.subjectDielectric Propertiesen_US
dc.titleFrequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodesen_US
dc.typearticleen_US
dc.relation.journalPhysica Scriptaen_US
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümüen_US
dc.identifier.volume90en_US
dc.identifier.issue9en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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