Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi

Abstract

Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO 2 environment clean and reliable use of the H-2 gas as the energy source of the future are expanded in various fields. In this case, the new research on the rapidly expanding field of applications and 112 gas sensor causes the increase. In this study, HfO2 thin films are grown on the p-Si by Atomic Layer Deposition (ALD) method and HfO2/p-Si thin film was produced. HfO2/p-Si structure is grown by Atomic Layer Deposition method and hydrogen gas sensing properties were investigated. Produced sample at different temperatures (30 degrees C-180 degrees C) and at different gas concentrations (1000ppm-4000ppm) as a function of time is investigated with measuring the electrical properties. Measurement results show that HfO2/p-Si thin films produced by ALD can be used as low temperatures hydrogen gas sensors.