Ara
Toplam kayıt 56, listelenen: 41-50
Morphometric Analysis of Accessory Vessel Grooves (AVG) in the Skulls of the Ancient Spradon Population: An Anthropological Approach
(Soc Chilena Anatomia, 2021)
Accessory vessel grooves (AVG), or accessory vessel sulcus, is the name given to grooves seen in the frontal region of the skull. In studies conducted by anthropologists on antiquity skeletons, it is seen that some variations ...
Electrical characterization of CdZnTe/Si diode structure
(Springer Heidelberg, 2020)
Temperature-dependent current-voltage (I - V), and frequency dependent capacitance-voltage (C - V) and conductance-voltage (G - V) measurements were performed in order to analyze characteristics of CdZnTe/Si structure. ...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
(Springer, 2020)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark ...
Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer
(Springer, 2020)
The current-voltage (I - V) and capacitance-voltage (C - V) characteristics of the organic heterojunction diode were investigated in a wide temperature range from 80 to 320 K and frequency range from 10 kHz to 1 MHz, ...
Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range
(Springer, 2020)
Au/Ti/HfO2/n-GaAs MIS (metal/insulating layer/semiconductor) diodes were fabricated by atomic layer deposition technique and their electrical properties were investigated in detail by the help of current-voltage (I-V) and ...
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
(Springer, 2020)
Effects of frequency and temperature variations on the electrical properties of Au/Si3N4/n-4H SiC diode were investigated. The diode responses to the change in frequency with applied AC signal of varying frequencies and ...
A study on electrical properties of Au/4H-SiC Schottky diode under illumination
(Springer, 2021)
Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform ...
Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
(Indian Acad Sciences, 2021)
The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the ...
Qurliqnoria (Bovidae, Mammalia) from the Upper Miocene of Corakyerler (Central Anatolia, Turkey) and its biogeographic implications
(Elsevier, 2020)
New bovid material from the Upper Miocene site of corakyerler (Canlun basin, Anatolia, Turkey) is described and compared here. The described taxon is identified as a representative of the stem caprine genus Qurlignoria, ...
Physical properties of heteroatom doped graphene monolayers in relation to supercapacitive performance
(Natl Inst Science Communication-Niscair, 2020)
Electrodes fabricated using graphene are quite promising for electric double layer capacitors. However graphene has the limitations of low 'Quantum Capacitance (QC)' near fermi level due to the presence of Dirac point that ...