Ara
Toplam kayıt 40, listelenen: 31-40
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
(Institute of Physics Publishing, 2015)
The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric ...
Benzotriazole and benzothiadiazole containing conjugated copolymers for organic solar cell applications
(Elsevier Ltd, 2012)
2-Dodecyl benzotriazole (BTz) and benzothiadiazole (BTd) containing copolymers poly(4-(2-dodecyl-2H-benzo[d][1,2,3]triazol-4-yl)benzo[c][1,2,5] thiadiazole (P1), poly(4-(5-(2-dodecyl-7-(thiophen-2yl)-2H-benzo[d][1,2,3] ...
CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation
(Institute of Physics Publishing, 2015)
Al/TiO2/p-Si and Al/TIO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two ...
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ...
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer, 2019)
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide ...
The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode
(Gazi Univ, 2018)
SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias ...
Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi
(Gazi Univ, 2016)
Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO 2 environment clean and reliable use of the H-2 gas as the energy source of the future are expanded in various fields. In this ...
Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode
(Gazi Univ, 2019)
The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric ...