Ara
Toplam kayıt 504, listelenen: 441-450
Structural, Magnetic, and Mossbauer Parameters' Evaluation of Sonochemically Synthesized Rare Earth Er3+ and Y3+ Ions-Substituted Manganese-Zinc Nanospinel Ferrites
(Amer Chemical Soc, 2021)
The effect of Er3+ and Y3+ ion-co-substituted Mn0.5Zn0.5ErxYxFe2-2xO4 (MZErYF) (x <= 0.10) spinel nanoferrites (SNFs) prepared by a sonochemical approach was investigated. Surface and phase analyses were carried out using ...
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
(Springer, 2020)
Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ...
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
(Springer, 2020)
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ...
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
(Springer, 2021)
The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
(Springer, 2021)
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ...
A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer
(2011)
Dielectric properties and ac electrical conductivity (σac) of Al/p-Si structures with 50 Ǻ (MIS) and 826 Ǻ (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the ...
Probable Novel Probiotics: Eps Production, Cholesterol Removal and Glycocholate Deconjugation of Lactobacillus Plantarum Ga06 and Ga11 Isolated from Local Handmade- Cheese
(Slovak Univ Agriculture Nitra, 2020)
In this study, it was aimed to investigate the effect of exopolysaccharide produced by 2 novel probiotic strains (Lactobacillus plantarum GA06 and GA11), isolated from local handmade cheese, on cholesterol mechanism and ...
A Facile Strategy for Construction of Sensor for Detection of Ondansetron and Investigation of its Redox Behavior and Thermodynamic Parameters
(Wiley-VCH Verlag, 2019)
A sodium dodecylsulfate-doped polypyrrole (SDS-PPy) film was elaborated on glassy carbon electrode (GCE) by an electrodeposition method in phosphate buffer solution (pH 2.0) containing pyrrole (Py) and sodium dodecyl sulfate ...