Ara
Toplam kayıt 407, listelenen: 361-370
Tailored microstructures, optical and magnetic qualities of strontium hexaferrites: Consequence of Tm3+ and Tb3+ ions Co-substitution
(Elsevier Sci Ltd, 2019)
Terbium (Tb) and Thulium (Tm) co-doped strontium hexaferrites (SHFs), with composition SrFe12-2xTbxTmxO19 (0.00 <= x <= 0.04), were prepared via sol-gel auto-combustion method. The effect of Tb3+ and Tm3+ (as codopants) ...
Ultrasonic synthesis, magnetic and optical characterization of Tm(3+)and Tb3+ ions co-doped barium nanohexaferrites
(Academic Press Inc Elsevier Science, 2020)
This study investigated the structural, optical and magnetic properties of BaTmxTbxFe12-2xO19(x <= 0.05) nanohexaferrites (NHFs) produced by ultrasonic assisted sol-gel combustion approach. The structure of all samples was ...
Strong correlation between Dy3+ concentration, structure, magnetic and microwave properties of the [Ni0.5Co0.5](DyxFe2-x)O-4 nanosized ferrites
(Elsevier Science Inc, 2020)
The dysprosium ions (Dy-3(+))-substituted nanosized ferrites (NFs) of composition [Ni0.5Co0.5](DyxFe2-x)O-4 (x <= 0.08) were prepared using the citrate gel process. To analyse the magnetic properties of the samples, the ...
SrCoxZrxFe12-2xO19 and SrNixZrxFe12-2xO19 hexaferrites: A Comparison Study of AC Susceptibility, FC-ZFC and hyperfine interactions
(Elsevier, 2020)
This study compares the AC susceptibility, FC-ZFC and hyperfine interactions of Sr(CoxZrx) Fe12-2xO19 and Sr(NixZrx)Fe12-2xO19 hexaferrites (HFs) manufactured via ultrasonic route. The formation of M-type hexaferrites have ...
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
(Springer, 2020)
Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ...
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
(Springer, 2020)
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ...
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
(Springer, 2021)
The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ...
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019)
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried ...
Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
(Springer, 2021)
A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS ...