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Toplam kayıt 23, listelenen: 1-10
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
(Elsevier Ltd, 2020)
In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in ...
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Analysis of temperature-dependent transmittance spectra of Zn0.5In0.5Se (ZIS) thin films
(Springer New York LLC, 2019)
Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550–950 nm and in temperature range of 10–300 K. Transmission spectra ...
Temperature dependence of electrical properties in In/Cu 2 ZnSnTe 4 /Si/Ag diodes
(Indian Academy of Sciences, 2019)
Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The ...
Influence of Si3N4 layer on the electrical properties of Au/n-4H SiC diodes
(Indian Academy of Sciences, 2018)
In this study, the effect of Si3N4 insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current–voltage ( I−V ), capacitance–voltage ( C−V ) and conductance–voltage ( G/w−V ) ...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
(Springer New York LLC, 2018)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C- V) and ...
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
(Elsevier Ltd, 2019)
In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were ...
Temperature dependence of band gaps in sputtered SnSe thin films
(Elsevier Ltd, 2019)
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. Transmission ...
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ...
Study on the electrical properties of ZnSe/Si heterojunction diode
(Springer New York LLC, 2017)
ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ...