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Toplam kayıt 5, listelenen: 1-5
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
(Springer, 2020)
Derived from the traditional dichalcogenide CuS structure, ternary transition metal chalcogenide nanoparticles in the form of CuCo5S8 are investigated under the aim of photodiode application. In addition to the detailed ...
Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend
(Springer, 2020)
The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dio ...
Analysis of forward and reverse biased current-voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer
(Springer, 2019)
The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias ...
Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
(Springer, 2021)
The electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in ...
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
(Springer, 2020)
CuCo5S8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo5S8/p-Si heterojunction device to characterize the dielectric performance of the ...