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Toplam kayıt 9, listelenen: 1-9
Frequency effect on electrical and dielectric characteristics of In/Cu 2 ZnSnTe 4 /Si/Ag diode structure
(Springer New York LLC, 2019)
In/Cu 2 ZnSnTe 4 /Si/Ag diode structure was fabricated by sputtering Cu 2 ZnSnTe 4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance ...
Synthesis of a benzotriazole bearing alternating copolymer for organic photovoltaic applications
(Royal Society of Chemistry, 2015)
A low band gap donor–acceptor (D–A) copolymer PTBTBDT, namely, poly(2-dodecyl-4,7-di(thiophen-2-yl)-2H-benzo[d][1,2,3]triazole-alt-4,8-bis(2-ethylhexyloxy)benzo[1,2-b:4,5-b′]dithiophene), was designed and synthesized via ...
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
(American Institute of Physics Inc., 2014)
In order to determine the effective current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage (I-V) measurements were carried out in the ...
Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes
(2011)
The dielectric properties and electrical conductivity of Al/SiO 2/p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using ...
The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor
(American Institute of Physics Inc., 2015)
In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light ...
Investigation on dielectric properties of atomic layer deposited Al 2O3 dielectric films
(2014)
Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room ...
Analysis of current conduction mechanism in CZTSSe/n-Si structure
(Springer New York LLC, 2018)
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films were deposited by the single step thermal evaporation process using the sintered powder of CZTSSe on soda lime glass (SLG) and Si wafer substrates. The structural, optical, ...
Study on the electrical properties of ZnSe/Si heterojunction diode
(Springer New York LLC, 2017)
ZnSe thin film is e-beam evaporated on monocrystalline p-Si to fabricate n-ZnSe/p-Si heterojunction. The electrical properties were investigated by current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage ...
Electrical properties of Au–Cu/ZnO/p-Si diode fabricated by atomic layer deposition
(Springer New York LLC, 2018)
The electrical properties of the Au–Cu/ZnO/p-Si diode were investigated with the temperature dependent current–voltage measurements in a wide temperature range from 220 to 360 K with 20 K steps and also frequency dependent ...