Yıldız, Dilber EsraKarakuş, MelikeToppare, Levent KamilÇırpan, Ali2019-05-132019-05-132014Yıldız, D. E., Karakuş, M., Toppare, L. K., Çırpan, A. (2014). Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices. Materials Science in Semiconductor Processing, 28, 84-88.1369-8001https://doi.org/10.1016/j.mssp.2014.06.038https://hdl.handle.net/11491/1524In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the Jr-V plot behaviors are given by linear dependence between In (Jr) and V1/2, where Jr is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.eninfo:eu-repo/semantics/closedAccessCurrent Conduction MechanismsLeakage CurrentOrganic DevicesPoole-Frenkel (PF) EffectArticle28848810.1016/j.mssp.2014.06.038N/AQ1