Yıldız, Dilber EsraAltındal, Şemsettin2019-05-132019-05-132011Yıldız, D. E., Altındal, Ş. (2011). A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer. Journal of Optoelectronics and Advanced Materials, 13(1), 53-58.1454-4164https://hdl.handle.net/11491/1562Dielectric properties and ac electrical conductivity (?ac) of Al/p-Si structures with 50 ? (MIS) and 826 ? (MOS) interfacial insulator layer (SiO2) have been investigated in the frequency range of 10 kHz-2 MHz using the capacitance–voltage (C–V) and conductance–voltage (G/?–V) measurements at room temperature. SiO2 layer was grown on p-Si by thermal oxidation method. Experimental results show that the dielectric constant (?'), dielectric loss (?''), loss tangent (tan?), ac electrical conductivity (?ac) and the real and imaginary parts of electric modulus (M' and M'') are strong functions of frequency in depletion region. Accordingly, it has been found that as the frequency increases, ?' values decrease while an increase is observed in ?ac and the electric modulus for two samples. On the other hand, the values of ?'' and tan? decrease with the increasing frequency for MIS and MOS structures at low frequencies while, at high frequencies, the values of ?'' and tan? increase with the increasing frequency for two structures. As a result, the interfacial polarization can more easily occur at low frequencies and/or the number of interface states (Nss) localized at SiO2/Si interface, consequently contributed to the improvement of dielectric properties and ac electrical conductivity of these structures.eninfo:eu-repo/semantics/closedAccessAC Electrical ConductivityDielectric PropertiesElectric ModulusFrequency DependenceMIS and MOS StructuresArticle1315358N/AQ4