Yıldız, Dilber EsraKoçyiğit, AdemErdal, Mehmet OkanYıldırım, Murat2021-11-012021-11-012021Yildiz, D. E., Kocyigit, A., Erdal, M. O., & Yildirim, M. (2021). Dielectric characterization of Al/PCBM: ZnO/p-Si structures for wide-range frequency. Bulletin of Materials Science, 44(1), 1-7.0250-47070973-7669https://doi.org/10.1007/s12034-020-02297-yhttps://hdl.handle.net/11491/7457The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M ' and M '') and ac electrical conductivity (sigma), dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications.eninfo:eu-repo/semantics/closedAccessPCBMZnODielectric constantElectric modulusAl/PCBM:ZnO/p-Si structureArticle44110.1007/s12034-020-02297-yQ4WOS:0006174762000112-s2.0-85100549063Q2