Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

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dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorKarabulut, Abdülkerim
dc.contributor.authorOrak, Iman
dc.contributor.authorTürüt, Abdulmecit
dc.date.accessioned2021-11-01T15:05:59Z
dc.date.available2021-11-01T15:05:59Z
dc.date.issued2021
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractThe electrical properties of Au/Ti/HfO2/n-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K. The HfO2 thin-film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (n) and barrier height (Phi(B0)) were determined for Au/Ti/n-GaAs and Au/Ti/HfO2/n-GaAs diodes using current-voltage (I-V) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/n-GaAs) diode and 1.30 and 0.94 eV for the Au/Ti/HfO2/n-GaAs MIS diode, respectively. An interfacial charge density value of Q(ss) = 4.14 x 10(12) Ccm(-2) for the MIS diode was calculated from the barrier height difference of Delta Phi = 0.94 - 0.77 = 0.17V. Depending on these results, the temperature-dependent C-V and G-V plots of the device were also investigated. The series resistance (R-s), phase angle, the interface state density (D-it), the real impedance (Z') and imaginary impedance (Z '') were evaluated using admittance measurements. The C and G values increased, whereas (Z '') and Z decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the G-V curves appeared at forward-bias side (approximate to 1.4 V); after this intersection point of the G-V plot, the G values decreased with increasing temperature at a given voltage. The intersection points in total Z versus V curves appeared at forward-bias side (approximate to 1.7 V). The Nyquist spectra were recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.
dc.identifier.citationYıldız, D. E., Karabulut, A., Orak, I., & Turut, A. (2021). Effect of atomic-layer-deposited HfO 2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode. Journal of Materials Science: Materials in Electronics, 32(8), 10209-10223.
dc.identifier.doi10.1007/s10854-021-05676-1
dc.identifier.endpage10223en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-85103350010
dc.identifier.scopusqualityQ2
dc.identifier.startpage10209en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05676-1
dc.identifier.urihttps://hdl.handle.net/11491/7460
dc.identifier.volume32en_US
dc.identifier.wosWOS:000633338300002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subject[No Keywords]en_US
dc.titleEffect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
dc.typeArticle

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