Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices
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Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (Jr-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the Jr-V plot behaviors are given by linear dependence between In (Jr) and V1/2, where Jr is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.
Açıklama
Anahtar Kelimeler
Current Conduction Mechanisms, Leakage Current, Organic Devices, Poole-Frenkel (PF) Effect
Kaynak
Materials Science in Semiconductor Processing
WoS Q Değeri
N/A
Scopus Q Değeri
Q1
Cilt
28
Sayı
Künye
Yıldız, D. E., Karakuş, M., Toppare, L. K., Çırpan, A. (2014). Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices. Materials Science in Semiconductor Processing, 28, 84-88.
