Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure

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dc.authoridYıldız, Dilber Esra / 0000-0003-2212-199X
dc.authoridTerlemezoğlu, Makbule / 0000-0001-7912-0176
dc.authoridBayraklı Sürücü, Özge / 0000-0002-8478-1267
dc.authoridParlak, Mehmet / 0000-0001-9542-5121
dc.authorwosidYıldız, Dilber Esra / AAB-6411-2020
dc.authorwosidTerlemezoğlu, Makbule / ABA-5010-2020
dc.authorwosidBayraklı Sürücü, Özge / ABA-4839-2020
dc.authorwosidParlak, Mehmet / ABB-8651-2020
dc.contributor.authorGüllü, Hasan Hüseyin
dc.contributor.authorBayraklı Sürücü, Özge
dc.contributor.authorTerlemezoğlu, Makbule
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorParlak, Mehmet
dc.date.accessioned2021-11-01T15:02:57Z
dc.date.available2021-11-01T15:02:57Z
dc.date.issued2019
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractIn this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking into consideration possible electronic applications with intrinsic attractive material properties. At each temperature step, the I-V curves showed about two orders of magnitude rectifying behavior and, according to the Schottky diode relation, the saturation current, zero-bias barrier height and ideality factor were extracted as a function of the temperature. In the case of non-ideal diode characteristics due to the inhomogeneties in the diode as observed from the characteristics of the calculated parameters, effective barrier height values are evaluated. In addition, based on the existence of the interface layer, density of interface states in the band gap region and parasitic resistances were determined by the capacitance measurements.
dc.identifier.citationGullu, H. H., Bayraklı Sürücü, Ö., Terlemezoglu, M., Yildiz, D. E., & Parlak, M. (2019). Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure. Journal of Materials Science: Materials in Electronics, 30(16), 15371-15378.
dc.identifier.doi10.1007/s10854-019-01913-w
dc.identifier.endpage15378en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue16en_US
dc.identifier.scopus2-s2.0-85069663419
dc.identifier.scopusqualityQ2
dc.identifier.startpage15371en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01913-w
dc.identifier.urihttps://hdl.handle.net/11491/6883
dc.identifier.volume30en_US
dc.identifier.wosWOS:000480558400057
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorYıldız, Dilber Esra
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal Of Materials Science-Materials In Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleInvestigation of electrical characteristics of Ag/ZnO/Si sandwich structure
dc.typeArticle

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