Wideband long wave infrared metamaterial absorbers based on silicon nitride
[ X ]
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics Inc.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, we present silicon nitride metamaterial absorber designs that accomplish large bandwidth and high absorption in the long wave infrared (LWIR) region. These designs are based on the metal-insulator-metal topology, insulator (silicon nitride), and the top metal (aluminum) layers are optimized to obtain high absorptance values in large bandwidths, for three different silicon nitride based absorber structures. The absorption spectrum of the final design reaches absorptance values above 90% in the wavelength interval between 8.07 ?m and 11.97 ?m, and above 80% in the wavelength interval between 7.9 ?m and 14 ?m, in the case of normal incidence. The difficulty in the design process of such absorbers stems from the highly dispersive behavior of silicon nitride in the LWIR region. On the other hand, silicon nitride is a widely used material in microbolometers, and accomplishing wide band absorption in silicon nitride is crucial in this regard. Therefore, this study will pave the way for more efficient infrared imaging devices, which are crucial for defense and security systems. Additionally, such designs may also find applications in thermal emitters. © 2016 Author(s).
Açıklama
Anahtar Kelimeler
[Belirlenecek]
Kaynak
Journal of Applied Physics
WoS Q Değeri
N/A
Scopus Q Değeri
Q1
Cilt
120
Sayı
20
Künye
Üstün, K., & Turhan-Sayan, G. (2016). Wideband long wave infrared metamaterial absorbers based on silicon nitride. Journal of Applied Physics, 120(20), 203101.
