Temperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films

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dc.authoridGasanly, Nizami / 0000-0002-3199-6686
dc.authoridparlak, mehmet / 0000-0001-9542-5121
dc.authoridDelice, Serdar / 0000-0001-5409-6528
dc.authoridSURUCU, Ozge / 0000-0002-8478-1267
dc.authoridTerlemezoglu, Makbule / 0000-0001-7912-0176
dc.authorwosidGasanly, Nizami / ABA-2249-2020
dc.authorwosidparlak, mehmet / ABB-8651-2020
dc.authorwosidDelice, Serdar / AAU-4793-2020
dc.authorwosidSURUCU, Ozge / ABA-4839-2020
dc.authorwosidTerlemezoglu, Makbule / ABA-5010-2020
dc.contributor.authorDelice, S.
dc.contributor.authorIsik, M.
dc.contributor.authorGullu, H. H.
dc.contributor.authorTerlemezoglu, M.
dc.contributor.authorSurucu, O. Bayrakli
dc.contributor.authorGasanly, N. M.
dc.contributor.authorParlak, M.
dc.date.accessioned2021-11-01T15:05:16Z
dc.date.available2021-11-01T15:05:16Z
dc.date.issued2020
dc.department[Belirlenecek]
dc.description.abstractStructural and optical properties of SnS2xSe(2-2x) thin films grown by magnetron sputtering method were investigated for composition of x = 0.5 (SnSSe) in the present study. X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy and scanning electron microscopy methods were used for structural characterization while temperature-dependent transmission measurements carried out at various temperatures in between 10 and 300 K were accomplished for optical investigations. X-ray diffraction pattern of studied composition presented peaks at positions which are between those of SnSe2 and SnS2. Transmittance spectra recorded at all applied temperatures were analyzed using well-known Tauc relation. Analyses revealed the direct band gap energy value of SnSSe thin films as 1.75 eV at room temperature. Change of band gap energy as a response to varying temperature were discussed in the study by utilizing Varshni relation. It was shown that variation of gap energy values was well-matched with the Varshni's empirical formula. Energy band gap at absolute zero and rate of change of band gap with temperature were found to be 1.783 eV and -2.1 x 10(-4) eV K-1, respectively.
dc.identifier.doi10.1016/j.mssp.2020.105083
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85082121091
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2020.105083
dc.identifier.urihttps://hdl.handle.net/11491/7203
dc.identifier.volume114en_US
dc.identifier.wosWOS:000535462600016
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[Belirlenecek]
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectSnS2en_US
dc.subjectSnSe2en_US
dc.subjectThin filmsen_US
dc.subjectOptical propertiesen_US
dc.titleTemperature dependent band gap in SnS2xSe(2-2x) (x=0.5) thin films
dc.typeArticle

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