The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

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dc.authorid0000-0003-2212-199X
dc.contributor.authorYıldız, Dilber Esra
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorTekeli Z.
dc.contributor.authorÖzer, Mehmet
dc.date.accessioned2019-05-13T09:03:44Z
dc.date.available2019-05-13T09:03:44Z
dc.date.issued2010
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractWe have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (Nss) and series resistance (Rs) effect on main electrical parameters such as zero-bias barrier height (?Bo) and ideality factor (n) for these SBDs. The forward and reverse bias current–voltage (I–V) characteristics of them were measured at 200 and 295 K, and experimental results were compared with each other. At temperatures of 200 and 295 K, ?Bo, n, Nss and Rs for MIS1 Schottky diodes (SDs) ranged from 0.393 to 0.585 eV, 5.70 to 4.75, 5.42×1013 to 4.27×1013 eV?1 cm?2 and 514 to 388 ?, respectively, whereas for MIS2 they ranged from 0.377 to 0.556 eV, 3.58 to 2.1, 1.25×1014 to 3.30×1014 eV?1 cm?2 and 312 to 290 ?, respectively. The values of n for two types of SBDs are rather than unity and this behavior has been attributed to the particular distribution of Nss and interfacial insulator layer at the metal/semiconductor interface. In addition, the temperature dependence energy density distribution profiles of Nss for both MIS1 and MIS2 SBDs were obtained from the forward bias I–V characteristics by taking into account the bias dependence of effective barrier height (?e) and Rs. Experimental results show that both Nss and Rs values should be taken into account in the forward bias I–V characteristics. It has been concluded that the p-type SBD (MIS2) shows a lower barrier height (BH), lower Rs, n and Nss compared to n-type SBD (MIS1), which results in higher current at both 200 and 295 K.
dc.identifier.citationYıldız, D. E., Altındal, Ş., Tekeli, Z., Özer, M. (2010). The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes. Materials Science in Semiconductor Processing, 13(1), 34-40.
dc.identifier.doi10.1016/j.mssp.2010.02.004
dc.identifier.endpage40en_US
dc.identifier.issn1369-8001
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ1
dc.identifier.startpage34en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2010.02.004
dc.identifier.urihttps://hdl.handle.net/11491/1525
dc.identifier.volume13en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectAu/SnO2/n-Si and Al/SnO2/p-Si SBDsen_US
dc.subjectI-V-T Characteristicsen_US
dc.subjectInsulator Layeren_US
dc.subjectSeries Resistanceen_US
dc.subjectSurface Statesen_US
dc.titleThe effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes
dc.typeArticle

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