Study on thermoluminescence of TlInS2 layered crystals doped with Pr

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dc.authorid0000-0001-5409-6528
dc.contributor.authorDelice, Serdar
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami Mamed
dc.date.accessioned2019-05-13T09:03:43Z
dc.date.available2019-05-13T09:03:43Z
dc.date.issued2018
dc.departmentHitit Üniversitesi, Fen Edebiyat Fakültesi, Fizik Bölümü
dc.description.abstractPraseodymium (Pr) doped TlInS2 crystals were studied by means of thermoluminescence (TL) measurements performed below room temperature with various heating rates. Detected TL signal exhibited glow curve consisting in overlapping two TL peaks at temperatures of 35 K (peak A) and 48 K (peak B) for 0.6 K/s heating rate. TL curve was analyzed with curve fitting and initial rise methods. Both of the applied methods resulted in consistent activation energies of 19 and 45 meV. The revealed trap levels were found to be dominated by mixed order of kinetics. Various heating rate dependencies of TL glow curves were also investigated and it was found that while peak A shows usual behavior, peak B exhibits anomalous heating rate behavior. Distribution of trap levels was explored using an experimental method called as Tmax?Tstop method. Quasi-continuous distributions with increasing activation energies from 19 to 29 meV (peak A) and from 45 to 53 meV (peak B) were ascribed to trap levels. Effect of Pr doping on the TL response of undoped TlInS2 crystals was discussed in the paper. © 2018 Elsevier Ltd
dc.identifier.citationDelice, S., Isik, M., & Gasanly, N. M. (2018). Study on thermoluminescence of TlInS2 layered crystals doped with Pr. Materials Science in Semiconductor Processing, 80, 99-103.
dc.identifier.doi10.1016/j.mssp.2018.02.027
dc.identifier.endpage103en_US
dc.identifier.issn1369-8001
dc.identifier.scopusqualityQ1
dc.identifier.startpage99en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2018.02.027
dc.identifier.urihttps://hdl.handle.net/11491/1521
dc.identifier.volume80en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectChalcogenidesen_US
dc.subjectDefectsen_US
dc.subjectDopingen_US
dc.subjectThermoluminescenceen_US
dc.titleStudy on thermoluminescence of TlInS2 layered crystals doped with Pr
dc.typeArticle

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